Title :
Soft breakdown enhanced hysteresis effects in ultra-thin oxide SOI nMOSFETs
Author :
Chen, M.C. ; Tsai, C.W. ; Gu, S.H. ; Wang, Tahui ; Lu, S. Huang ; Lin, S.W. ; Yang, G.S. ; Chen, J.K. ; Chien, S.C. ; Loh, Y.T. ; Liu, F.T.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsin-Chu, Taiwan
Abstract :
The impact of soft breakdown location on Vt hysteresis in partially depleted SOI nMOSFETs with ultra-thin oxide (1.6 nm) is investigated. Two breakdown enhanced hysteresis modes are identified. In a channel breakdown MOSFET, excess holes attributed to valence electron tunneling flow to the floating body and thus cause Vt hysteresis in gate bias switching. In contrast, for a drain-edge breakdown device, enhanced Vt hysteresis is observed during drain bias switching because of increased band-to-band tunneling current.
Keywords :
CMOS integrated circuits; MOSFET; dielectric thin films; hysteresis; semiconductor device breakdown; silicon-on-insulator; tunnelling; SOI n-MOSFETs; band-to-band tunneling current; breakdown enhanced hysteresis modes; channel breakdown MOSFET; drain bias switching; drain-edge breakdown device; gate bias switching; n-channel MOSFET; partially depleted SOI nMOSFETs; scaled SOI CMOS technology; soft breakdown enhanced hysteresis effects; soft breakdown location; threshold voltage hysteresis; ultra-thin oxide; valence electron tunneling; CMOS technology; Charge carrier processes; Electric breakdown; Feedback; Hysteresis; Leakage current; MOSFET circuits; Silicon on insulator technology; Tunneling; Voltage;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2002. 40th Annual
Print_ISBN :
0-7803-7352-9
DOI :
10.1109/RELPHY.2002.996670
