Title :
18.5% efficient first-generation MIS inversion-layer silicon solar cells
Author :
Metz, Axel ; Meyer, Rudiger ; Kuhlmann, Burkhard ; Grauvogl, Manfred ; Hezel, Rudolf
Author_Institution :
Inst. fur Solarenergieforschung Hameln, Emmerthal, Germany
fDate :
29 Sep-3 Oct 1997
Abstract :
In this paper, progress in the development of high-efficiency metal-insulator-semiconductor inversion-layer (MIS-IL) silicon solar cells at ISFH is presented. We fabricated MIS-IL solar cells showing independently confirmed energy conversion efficiencies of up to 18.5%. This represents the highest value reported to date for MIS-IL silicon cells. The increase in cell efficiency has been possible by improvements along several lines: (i) reduced perimeter recombination losses, (ii) a reduced contact resistance of the MIS front grid, and (iii) reduced rear surface recombination losses. The cells are characterised in detail and design modifications for further improvements towards 20% efficiency are presented
Keywords :
MIS devices; contact resistance; elemental semiconductors; inversion layers; losses; silicon; solar cells; surface recombination; 18.5 percent; MIS inversion-layer silicon solar cells; Si; Si solar cells; design modifications; energy conversion efficiencies; front grid contact resistance reduction; inversion-layer solar cells; metal-insulator-semiconductor solar cells; perimeter recombination losses reduction; rear surface recombination losses reduction; Artificial intelligence; Cleaning; Contact resistance; Fabrication; Metal-insulator structures; Photovoltaic cells; Silicon; Solar power generation; Surface resistance; Surface texture;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.653917
