DocumentCode
2428645
Title
On The Correlation Between Multiple Hot Blocks And Package Thermal Resistance
Author
Ankireddi, Sai ; Copeland, David
Author_Institution
Semicond. Packaging, Sun Microsystems Inc., Sunnyvale, CA
fYear
2007
fDate
18-22 March 2007
Firstpage
69
Lastpage
73
Abstract
A flip-chip package with square die is considered in this study. Up to four square non-intersecting hot blocks are imposed on the die´s otherwise uniform power distribution. Block locations on the die outline are randomly chosen with uniform probability. The power density of a given block is a random parameter, and is permitted to be as high as 10times the baseline uniform bulk power density. Additionally, the size of any block is also treated as a random parameter and is permitted to be as high as 10 % of the die area. A 6000-tuple Monte Carlo study of the packages is conducted, and the package thermal resistance (Rjc) noted in each case. A variety of models are fit to the Rjc using the block characteristics as key variables, and their quality is characterized using the statistical correlation coefficient as a model metric. The results suggest a 96 % correlation between Rjc and the largest product of local power ratio and square of effective local power density ratio among the blocks- providing a simple and useful method to immediately identify blocks with the most impact on Rjc in a die floorplan.
Keywords
Monte Carlo methods; flip-chip devices; thermal resistance; Monte Carlo analysis; block locations; flip-chip package; multiple hot blocks; package thermal resistance; power density; Computer architecture; Cooling; Microprocessors; Monte Carlo methods; Power distribution; Power system management; Semiconductor device packaging; Sun; Thermal management; Thermal resistance; Hot blocks; Monte Carlo analysis; correlation; flip-chip; package; thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Thermal Measurement and Management Symposium, 2007. SEMI-THERM 2007. Twenty Third Annual IEEE
Conference_Location
San Jose, CA
ISSN
1065-2221
Print_ISBN
1-4244-09589-4
Electronic_ISBN
1065-2221
Type
conf
DOI
10.1109/STHERM.2007.352408
Filename
4160889
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