DocumentCode :
2428646
Title :
Surface texturing using reactive ion etching for multicrystalline silicon solar cells
Author :
Fukui, K. ; Inomata, Y. ; Shirasawa, K.
Author_Institution :
Kyocera Corp., Shiga, Japan
fYear :
1997
fDate :
29 Sep-3 Oct 1997
Firstpage :
47
Lastpage :
50
Abstract :
We have developed a new surface texturing technique using a reactive ion etching (RIE) method for multicrystalline silicon (mc-Si) solar cells, which is expected to form a low reflectance surface on grains of various crystalline orientations. This surface texture has a cone shape, and aspect ratio and size of which can be easily controlled. We have optimized surface shape and emitter sheet resistance. The optimum emitter sheet resistance for RIE textured cell is higher than that for the usual cell. The high aspect ratio of the cone shape makes surface reflectance low, but the cell efficiency is not so good. There is an optimum aspect ratio because the emitter of cell with high aspect ratio surface has large saturation current and cell performance is decreased with aspect ratio. We have fabricated over 17% efficient large area (225 cm2) mc-Si solar cell using this surface texturing technique and passivation schemes which is based on the silicon nitride film deposited by the plasma CVD method and hydrogen annealing at a high temperature
Keywords :
annealing; elemental semiconductors; passivation; plasma CVD coatings; reflectivity; silicon; solar cells; sputter etching; surface texture; 17 percent; Si; Si solar cells; Si3N4; cell efficiency; cell performance; cone shape; crystalline orientations; emitter sheet resistance; hydrogen annealing; low reflectance surface; multicrystalline silicon solar cells; optimum aspect ratio; optimum emitter sheet resistance; passivation; plasma CVD method; reactive ion etching; saturation current; silicon nitride film deposition; surface shape optimisation; surface texturing; surface texturing technique; Crystallization; Etching; Photovoltaic cells; Plasma temperature; Reflectivity; Shape control; Silicon; Size control; Surface resistance; Surface texture;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
ISSN :
0160-8371
Print_ISBN :
0-7803-3767-0
Type :
conf
DOI :
10.1109/PVSC.1997.653921
Filename :
653921
Link To Document :
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