• DocumentCode
    2428666
  • Title

    A Junction Temperature Reduction Technique for a Microprocessor Considering Temperature Coupled Leakage Power

  • Author

    Yoo, Jaewook ; Choi, Kiwon ; Kang, Sayoon

  • Author_Institution
    Interconnect Product & Technol., Samsung Electron., Co. Ltd., Yongin
  • fYear
    2007
  • fDate
    18-22 March 2007
  • Firstpage
    74
  • Lastpage
    78
  • Abstract
    Leakage power is emerging as a key challenge in IC design. Since leakage power has super-linear dependency on operating temperature, it becomes imperative to consider the thermal effects while optimizing leakage power. In this paper, an inter-simulation technique which accounts for leakage power and temperature variations is present. Integrating leakage model and coupled thermal-leakage simulations, the converged temperature and power distributions are achieved. In order to flatten the on chip temperature gradient, the revised floorplan design of a microprocessor is proposed. The on-chip temperature distributions are verified with measurement results using an infrared thermography method. The analysis results show that the realistic on-chip temperature distribution is a key for a precise estimation of leakage power. In addition, an important design implication is that the leakage power optimization problem has to be considered as a synthetic task considering logic organization, circuit parameters and chip floor plan.
  • Keywords
    infrared imaging; integrated circuit design; leakage currents; low-power electronics; microprocessor chips; temperature distribution; IC design; chip floor plan; circuit parameters; infrared thermography method; intersimulation technique; junction temperature reduction technique; leakage power optimization problem; localized heating; logic organization; microprocessor; on chip temperature gradient; power distributions; temperature coupled leakage power; CMOS logic circuits; Circuit simulation; Leakage current; Microprocessors; Packaging; Power dissipation; Semiconductor device modeling; Subthreshold current; Temperature dependence; Temperature distribution; Leakage power; Localized heating; Package; Temperature dependent leakage current; Thermal simulation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Thermal Measurement and Management Symposium, 2007. SEMI-THERM 2007. Twenty Third Annual IEEE
  • Conference_Location
    San Jose, CA
  • ISSN
    1065-2221
  • Print_ISBN
    1-4244-09589-4
  • Electronic_ISBN
    1065-2221
  • Type

    conf

  • DOI
    10.1109/STHERM.2007.352409
  • Filename
    4160890