• DocumentCode
    2428834
  • Title

    Combined Lateral Vertical RESURF (CLAVER) LDMOS structure

  • Author

    Khan, Tahir ; Khemka, Vishnu ; Zhu, Ronghua ; Huang, Weixiao ; Cheng, Xu ; Hui, Paul ; Ger, Muh-ling ; Grote, Bernard ; Rodriquez, Pete

  • Author_Institution
    Freescale Semicond., Tempe, AZ, USA
  • fYear
    2009
  • fDate
    14-18 June 2009
  • Firstpage
    13
  • Lastpage
    16
  • Abstract
    In this paper, a unique Combined Lateral Vertical RESURF (CLAVER) LDMOS structure is proposed for breakthrough performance. The structure uses a secondary RESURF design to terminate in the vertical direction to yield a much improved performance trade-off. The proposed device uses standard process steps available in integrated technology platforms to give a breakdown as high as 150 V with ground-breaking on-state resistance of 159 mOhm-mm2.
  • Keywords
    MIS devices; power integrated circuits; combined lateral vertical RESURF LDMOS; integrated smartpower technology; voltage 150 V; Automotive engineering; Costs; Electric breakdown; Immune system; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices & IC's, 2009. ISPSD 2009. 21st International Symposium on
  • Conference_Location
    Barcelona
  • ISSN
    1943-653X
  • Print_ISBN
    978-1-4244-3525-8
  • Electronic_ISBN
    1943-653X
  • Type

    conf

  • DOI
    10.1109/ISPSD.2009.5157989
  • Filename
    5157989
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2428834