Title :
Radiation-stable solid state devices based on intrinsic semiconductors
Author :
Gurevich, Yuri G. ; Volovichev, Igor N. ; Koshkin, Vladimir M.
Author_Institution :
Dept. de Fisica, CINVESTAV-IPN, Mexico City, Mexico
Abstract :
The perspective of use of radiation-stable semiconductor compounds with loose crystal structures for development of solid state devices is discussed. The theoretical possibility of creation of active electronic elements based on semiconductors of this type is shown. A feasible implementation of the solid-state amplifier on the basis of thin-film heterostructures of intrinsic semiconductors is suggested and its parameters are calculated
Keywords :
III-VI semiconductors; carrier mobility; electrical conductivity; indium compounds; radiation hardening (electronics); semiconductor thin films; vacancies (crystal); In2Te3; active electronic elements; intrinsic semiconductors; loose crystal structures; radiation-stable solid state devices; thin-film heterostructures; Conductivity; Gallium arsenide; Ionizing radiation; Lattices; Optical scattering; Particle scattering; Semiconductor impurities; Semiconductor materials; Solid state circuits; Stability;
Conference_Titel :
Devices, Circuits and Systems, 2000. Proceedings of the 2000 Third IEEE International Caracas Conference on
Conference_Location :
Cancun
Print_ISBN :
0-7803-5766-3
DOI :
10.1109/ICCDCS.2000.869827
