A dynamic threshold-voltage SOI MOSFET with a stepped channel doping profile

Author

Xu, Jun ; Cheng, Ming-C

Author_Institution

Dept. of Comput. Sci., New Orleans Univ., LA, USA

fYear

2000

fDate

2000

Abstract

A novel dynamic threshold voltage SOI MOS structure with a stepped-channel-doping (SCD) profile is proposed. The influence of the SCD profile on performance of deep-submicron dynamic threshold SOI MOSFET´s is studied systematically using two-dimensional device simulation. It is discovered that the SCD configuration combined with the dynamic threshold SOI MOS structure not only effectively suppresses short-channel effects, but also greatly enhances the device driving capability. Moreover, the heavily doped body in the SCD device substantially reduces the forward-biased body current and source-drain punch-through current

Keywords

MOSFET; doping profiles; semiconductor device models; silicon-on-insulator; 2D device simulation; SCE suppression; deep-submicron MOSFET; device driving capability enhancement; dynamic threshold-voltage SOI MOSFET; forward-biased body current reduction; short-channel effects suppression; source-drain punch-through current reduction; stepped channel doping profile; Computer science; Degradation; Doping profiles; Leakage current; Low voltage; MOS devices; MOSFET circuits; Power integrated circuits; Threshold voltage; User centered design;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems, 2000. Proceedings of the 2000 Third IEEE International Caracas Conference on

Conference_Location

Cancun

Print_ISBN

0-7803-5766-3

Type

conf

DOI

10.1109/ICCDCS.2000.869834

Filename

869834