Title :
Hydrodynamic simulation of MESFET´s using the least-squares finite element method
Author :
Shen, Min ; Cheng, Ming-C
Author_Institution :
Adv. Mater. Res. Inst., New Orleans Univ., LA, USA
Abstract :
A least-squares finite element method is developed for the 2D hydrodynamic simulation of semiconductor devices. The hydrodynamic device equations coupled with the Poisson equation are formulated as one unified equation system in this least squares finite element scheme. The developed method is applied to simulation of a 2D MESFET with a 0.2 μm gate to demonstrate its capability of handling the large gradients of variables and discontinuities of the boundary conditions
Keywords :
Poisson equation; Schottky gate field effect transistors; finite element analysis; least squares approximations; semiconductor device models; 0.2 micron; 2D hydrodynamic simulation; MESFET; Poisson equation; boundary conditions; finite element method; hydrodynamic device equations; least-squares FEM; semiconductor device; unified equation system; Computational modeling; Finite difference methods; Finite element methods; Hot carrier effects; Hydrodynamics; Least squares methods; MESFETs; Navier-Stokes equations; Poisson equations; Semiconductor devices;
Conference_Titel :
Devices, Circuits and Systems, 2000. Proceedings of the 2000 Third IEEE International Caracas Conference on
Conference_Location :
Cancun
Print_ISBN :
0-7803-5766-3
DOI :
10.1109/ICCDCS.2000.869835
