Title :
A new method to extract the LDD doping concentration on fully depleted SOI nMOSFET at 300 K
Author :
Nicolett, A.S. ; Martino, J.A. ; Simoen, Eddy ; Claeys, C.
Author_Institution :
Lab. de Sistemas Integraveis, Sao Paulo Univ., Brazil
Abstract :
We present a simple method to extract the effective doping concentration related to the LDD (Lightly Doped Drain) regions in fully depleted SOI MOSFETs. The series resistance of an LDD structure MOSFET is composed of different components, the LDD series resistance, being the dominant one. The proposed method uses the back gate voltage influence on the back interface below the LDD region. MEDICI simulations were used to support the analysis
Keywords :
MOSFET; doping profiles; electric resistance; semiconductor device models; silicon-on-insulator; 300 K; LDD doping concentration extraction; LDD series resistance; LDD structure MOSFET; MEDICI simulations; Si; back gate voltage influence; back interface; fully depleted SOI nMOSFET; lightly doped drain regions; n-channel MOSFET; Analytical models; Back; Doping; Electric resistance; Immune system; MOSFET circuits; Medical simulation; Semiconductor films; Silicon on insulator technology; Voltage;
Conference_Titel :
Devices, Circuits and Systems, 2000. Proceedings of the 2000 Third IEEE International Caracas Conference on
Conference_Location :
Cancun
Print_ISBN :
0-7803-5766-3
DOI :
10.1109/ICCDCS.2000.869841
