Title :
30V High-side N-channel Lateral Trench MOSFET
Author :
Disney, Don ; Chan, Wilson ; Lam, Roy ; Blattner, Robert ; Ma, Steve ; Seng, Wesley ; Chen, Jun-Wei ; Williams, Richard K.
Author_Institution :
Adv. Analogic Technol., Inc., Santa Clara, CA, USA
Abstract :
A High-side Lateral Trench MOSFET (LTDMOS) was fabricated in a 0.35 mum ModularBCDtrade technology. The drift region of this device completely surrounds and isolates the trench, body, and source regions from the substrate, allowing the entire LTDMOS to float to a high-voltage above the substrate. A complete 28 V half-bridge level-shifter was demonstrated using integrated floating high-side drive circuitry along with low-side and high-side LTDMOS devices.
Keywords :
MOS integrated circuits; isolation technology; ModularBCD technology; half-bridge level-shifter; high-side N-channel lateral trench MOSFET; integrated floating high-side drive circuitry; isolation; size 0.35 mum; voltage 30 V; Body regions; CMOS technology; Immune system; Integrated circuit technology; Isolation technology; MOSFET circuits; Plugs; Switches; Tungsten; Voltage;
Conference_Titel :
Power Semiconductor Devices & IC's, 2009. ISPSD 2009. 21st International Symposium on
Conference_Location :
Barcelona
Print_ISBN :
978-1-4244-3525-8
Electronic_ISBN :
1943-653X
DOI :
10.1109/ISPSD.2009.5158068
