Atomistic simulation of quantum dots including strain and bandstructure and full band simulation of hole transport in 1-D heterostructures

As microelectronic research moves devices to nanometer scale operating at GHz speeds, the physics of electron flow through devices becomes more complicated and physical effects, which previously could be ignored safely in microelectronic devices, become significant. High energy electron injection, quantization of charge, quantization of energy, and electron scattering interactions are some of the phenomena that are presently being investigated experimentally and theoretically. Raytheon/TI developed a 1-D quantum device simulator (NEMO-1D) to address such issues. That effort combined expertise in device physics, numerical and graphical user interface technologies to produce the first quantitative, general-purpose quantum device simulator. The work presented here is an extension of the of the NEMO 1-D software to massively parallel high performance computing to enable the simulation of hole transport and to 3-D modeling to enable quantum dot simulations.