DocumentCode
2431408
Title
Frequency shift mixer on Gunn diode with cathode static domain
Author
Yatsunenko, A.G. ; Zabolotny, P.I. ; Sabansky, A.N.
Author_Institution
Inst. of Tech. Mech., Acad. of Sci., Dnepropetrovsk, Ukraine
fYear
2000
fDate
11-15 Sept. 2000
Firstpage
127
Lastpage
130
Abstract
This paper considers the possibility of effective design of frequency shift mixers (FSM), based on Gunn diodes with non-uniform electron distribution in the cathode. The electron transition frequency is 2-3 times lower than that of the input signal. One of the main merits of the researched FSM is the possibility of carrier frequency suppression under certain values of bias voltage and impedance of transmission line, containing the Gunn-diode.
Keywords
Gunn diodes; microwave mixers; Gunn diode; bias voltage; carrier frequency suppression; cathode static domain; electron transition frequency; frequency shift mixer; nonuniform electron distribution; transmission line impedance; Ambient intelligence; Cathodes; Diodes; Frequency; Gunn devices; Helium; IEEE catalog; Microwave technology; Organizing;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2000. Microwave and Telecommunication Technology. 2000 10th International Crimean
Conference_Location
Crimea, Ukraine
Print_ISBN
966-572-048-1
Type
conf
DOI
10.1109/CRMICO.2000.1255873
Filename
1255873
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