Title :
Effect of microwave radiation on the GaAs MESFET parameters
Author :
Kamalov, A.B. ; Konakova, R.V. ; Milenin, V.V. ; Rengevych, A.E. ; Soloviev, E.A.
Author_Institution :
Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
Abstract :
We present the results of our investigations of the microwave radiation effect on the degradation processes in gallium arsenide MESFETs. It was shown that short-term action of magnetron microwave radiation (frequency of 2.45 GHz, output power of 800 W) impairs the parameters of MESFETs with a Au/Ti/n-GaAs Schottky gate. In this case the main changes occur in the Schottky gate. Replacement of titanium with TiN/sub x/ results in an increase of the Schottky barrier stability to microwave radiation.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; microwaves; radiation effects; stability; 2.45 GHz; 800 W; Au-Ti-GaAs; Au-TiN-GaAs; Au/Ti/n-GaAs Schottky gate; Au/TiN/sub x//n-GaAs Schottky gate; GaAs MESFET parameters; Schottky barrier stability; degradation processes; microwave radiation; Degradation; Frequency; Gallium arsenide; Gold; MESFETs; Power generation; Radiation effects; Schottky barriers; Tin; Titanium;
Conference_Titel :
Microwave Conference, 2000. Microwave and Telecommunication Technology. 2000 10th International Crimean
Conference_Location :
Crimea, Ukraine
Print_ISBN :
966-572-048-1
DOI :
10.1109/CRMICO.2000.1255875
