• DocumentCode
    2431633
  • Title

    Improved SPICE macromodel of phase change random access memory

  • Author

    Chang, Huan-Lin ; Chang, Hung-Chih ; Yang, Shang-Chi ; Tsai, Hsi-Chun ; Li, Hsuan-Chih ; Liu, C.W.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • fYear
    2009
  • fDate
    28-30 April 2009
  • Firstpage
    134
  • Lastpage
    137
  • Abstract
    This paper presents an improved SPICE macromodel of phase change random access memory (PCRAM). Based on the circuit-based model architecture in [1], the novelty of this work lies in (1) accurate modeling the current-voltage (I-V) plot including the snapback phenomenon, and (2) solution to the falling edge problem to avoid misrepresentation of the PCRAM state, and (3) calibration of the crystallization time for potential multilevel (ML) operation of the PCRAM.
  • Keywords
    SPICE; crystallisation; integrated circuit modelling; phase change memories; SPICE macromodel; crystallization time; falling edge problem; phase change random access memory; Amorphous materials; Circuits; Crystallization; Electrical resistance measurement; Logic; Nonvolatile memory; Phase change random access memory; Read-write memory; SPICE; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Design, Automation and Test, 2009. VLSI-DAT '09. International Symposium on
  • Conference_Location
    Hsinchu
  • Print_ISBN
    978-1-4244-2781-9
  • Electronic_ISBN
    978-1-4244-2782-6
  • Type

    conf

  • DOI
    10.1109/VDAT.2009.5158113
  • Filename
    5158113
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2431633