Title :
Impact of scaling on CMOS IC failure rate and design rules for reliability
Author :
Haggag, A. ; Hess, K. ; McMahou, W. ; Register, L.F.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
A main degradation mechanism in CMOS IC´s is hot carrier induced desorption of hydrogen from the passivated silicon-oxide interface which creates charged interface traps and causes CMOS device propagation delay to increase. This leads to variations in the hot carrier aging rate of nMOSFETs which results in a distribution for the CMOS IC lifetime. In this paper we calculate the impact of scaling on roadmap CMOS device failure rates and present some design rules for reliability.
Keywords :
CMOS integrated circuits; ageing; failure analysis; hot carriers; integrated circuit design; integrated circuit reliability; CMOS IC failure rate; design rules; device scaling; hot carrier aging; interface traps; lifetime distribution; nMOSFET; propagation delay; reliability; Aging; Bonding; CMOS integrated circuits; CMOS technology; Computer interfaces; Degradation; Hot carriers; MOSFET circuits; Physics; Registers;
Conference_Titel :
Computational Electronics, 2000. Book of Abstracts. IWCE Glasgow 2000. 7th International Workshop on
Conference_Location :
Glasgow, UK
Print_ISBN :
0-85261-704-6
DOI :
10.1109/IWCE.2000.869916
