DocumentCode
2431804
Title
Nonequilibrium hole transport in deep sub-micron well-tempered Si p-MOSFETs
Author
Watling, J.R. ; Zhao, Y.P. ; Asenov, A. ; Barker, J.R.
Author_Institution
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
fYear
2000
fDate
22-25 May 2000
Firstpage
66
Lastpage
67
Abstract
Using 2D full-band MC simulations the authors study nonequilibrium transport effects and the performance potential of well tempered Si p-channel MOSFETs covering gate lengths ranging from 90nm to 25nm. By comparing MC simulations with carefully calibrated drift diffusion (DD) simulations of the same devices, they provide a quantitative estimate of the importance and the influence of nonequilibrium transport on the device performance.
Keywords
MOSFET; Monte Carlo methods; digital simulation; hole mobility; semiconductor device models; 2D full-band Monte Carlo simulation; 90 to 25 nm; Si; deep sub-micron well-tempered p-MOSFETs; device performance potential; drift diffusion simulations; gate length; nonequilibrium hole transport effects; MOSFET circuits; Monte Carlo methods; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics, 2000. Book of Abstracts. IWCE Glasgow 2000. 7th International Workshop on
Conference_Location
Glasgow, UK
Print_ISBN
0-85261-704-6
Type
conf
DOI
10.1109/IWCE.2000.869925
Filename
869925
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