• DocumentCode
    2431933
  • Title

    Structural and morphology of zinc sulphide thin films on various temperature

  • Author

    Maheran, A. H. Afifah ; Abdullah, H. ; Said, Muzalifah ; Fauzan, M.N.Z.A. ; Haron, Nor Zaidi

  • Author_Institution
    Fac. of Electron. & Comput. Eng., Univ. Teknikal Malaysia Melaka (UTeM), Durian Tunggal, Malaysia
  • fYear
    2011
  • fDate
    28-30 Sept. 2011
  • Firstpage
    28
  • Lastpage
    31
  • Abstract
    This study were focused on nanocrystalline structure and morphology on zinc sulphide thin film in four different temperature which are at 250 °C, 300 °C, 350 °C and 400 °C. Sol-gel technique is used to produce the thin films on quartz slide. The reaction of chemical obtained was a colloidal and transparent solution. There are EDX, SEM and XRD experiment were used to characterize the sample in each thin film. EDX analysis confirmed that the thin film consist of element zinc and sulphur. In SEM shows the film are thicker and have bigger grains size when the film annealed at 400 °C compared to temperature of 250 °C with the grain size between 26.8-60.3 nm and 22.3-29.0 nm respectively. The thicknesses of the film are 93.79 nm, 107.2 nm, 119.1 nm and 127.3 nm from temperature of 250 °C to 400 °C respectively. XRD shows development of well-crystallized film with pure wurtzite structure after annealing. XRD spectrum indicates that the films are amorphous and have cubic zinc blend structure.
  • Keywords
    II-VI semiconductors; X-ray chemical analysis; X-ray diffraction; amorphous semiconductors; annealing; crystallisation; grain size; nanofabrication; nanostructured materials; scanning electron microscopy; semiconductor thin films; sol-gel processing; wide band gap semiconductors; zinc compounds; EDX; SEM; SiO2; XRD; ZnS; amorphous structure; annealing; chemical reaction; colloidal solution; crystallisation; cubic zinc blend structure; grain size; morphology; nanocrystalline structure; quartz slide; sol-gel method; structural property; temperature 250 degC; temperature 300 degC; temperature 350 degC; temperature 400 degC; transparent solution; wurtzite structure; zinc sulphide thin films; Annealing; Chemicals; Films; Substrates; Surface morphology; X-ray scattering; Zinc; Sol-gel method; Zinc Sulphide thin film; annealing; nanocrystalline;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro and Nanoelectronics (RSM), 2011 IEEE Regional Symposium on
  • Conference_Location
    Kota Kinabalu
  • Print_ISBN
    978-1-61284-844-0
  • Type

    conf

  • DOI
    10.1109/RSM.2011.6088284
  • Filename
    6088284