Title :
Dual-diode limiter for high-power/low-spike-leakage applications
Author :
Tan, R.J. ; Kaul, R.
Author_Institution :
Harryn Diamond Lab., Adelphi, MD, USA
Abstract :
Procedures, confirmed by both measured data and microwave circuit analysis are presented for designing dual-diode, passive microwave limiters with low spike leakage (<100 nJ) and the ability to handle high peak power (on the order of 10 mJ of incident energy). Design parameters covered are PIN diode characteristics, polarity, package parasitics, and the spacing between the diodes. Such limiters are needed to protect sensitive electronics from high-power RF.<>
Keywords :
microwave limiters; p-i-n diodes; protection; solid-state microwave circuits; PIN diode characteristics; design parameters; dual diode limiter; high peak power; high power RF protection; low-spike-leakage applications; package parasitics; passive microwave limiters; polarity; sensitive electronics; Capacitance; Diodes; Energy measurement; Frequency measurement; Inductance; Insertion loss; Integrated circuit noise; Integrated circuit packaging; Laboratories; Protection;
Conference_Titel :
Microwave Symposium Digest, 1990., IEEE MTT-S International
Conference_Location :
Dallas, TX
DOI :
10.1109/MWSYM.1990.99689
