Title :
MOVPE of CuGaSe/sub 2/ for photovoltaic applications
Author :
Kampschulte, T. ; Bauknecht, A. ; Blieske, U. ; Saad, M. ; Chichibu, S. ; Lux-Steiner, M. Ch
Author_Institution :
Hahn-Meitner-Inst., Berlin, Germany
fDate :
Sept. 29 1997-Oct. 3 1997
Abstract :
For the development of a CuGaSe2-based solar cell, CuGaSe2 epitaxial layers were grown on GaAs(001) substrates by low-pressure metalorganic vapour phase epitaxy (MOVPE) exclusively with metalorganic precursors. X-ray diffraction (XRD) measurements revealed predominantly c[001]-oriented growth. The mean surface roughness was determined to be less than 6 nm by atomic force microscopy (AFM). Low-temperature photoluminescence (PL) at 10 K was dominated by a defect-correlated emission at 1.627 eV. Moreover, it was possible to observe near band-edge emission. All CuGaSe2 layers showed p-type conductivity with net carrier concentrations in the order of 10 17 cm-3 and Hall-mobilities of approximately 30 cm 2/Vs
Keywords :
Hall mobility; X-ray diffraction; atomic force microscopy; carrier density; copper compounds; electrical conductivity; gallium compounds; photoluminescence; semiconductor epitaxial layers; solar cells; surface topography; ternary semiconductors; vapour phase epitaxial growth; 10 K; CuGaSe/sub 2/; CuGaSe/sub 2/ epitaxial layers; CuGaSe/sub 2/-based solar cell; GaAs; Hall-mobilities; MOVPE; X-ray diffraction measurements; atomic force microscopy; band-edge emission; c[001]-oriented growth; defect-correlated emission; low-pressure metalorganic vapour phase epitaxy; low-temperature photoluminescence; mean surface roughness; metalorganic precursors; net carrier concentrations; p-type conductivity; solar cell; Atomic force microscopy; Atomic layer deposition; Epitaxial growth; Epitaxial layers; Photovoltaic cells; Rough surfaces; Substrates; Surface roughness; X-ray diffraction; X-ray scattering;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654110
