DocumentCode :
2432831
Title :
Molecular effusion-boltzmann model for parylene C deposition in deep trench
Author :
Yinhua Lei ; Yingcun Luo ; Wei Wang ; Zhihong Li
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
fYear :
2010
fDate :
20-23 Jan. 2010
Firstpage :
628
Lastpage :
632
Abstract :
As an excellent thermal isolation approach, deep trench filled by parylene C has been widely used in versatile MEMS devices. Requirement of void-free trench filling in these applications called for a deep understanding of the parylene C deposition in high aspect ratio trenches. In this work, a molecular effusion-Boltzmann model is advanced to predict the parylene C filling behaviors. Numerical simulation results indicate that the present model can effectively describe the filling profiles and thereby guide a void-free trench filling, which are quite consistent with the experimental results.
Keywords :
chemical vapour deposition; isolation technology; micromechanical devices; numerical analysis; polymer films; MEMS devices; aspect ratio trenches; deep trench; deposition; filling profiles; molecular effusion-Boltzmann model; numerical simulation; parylene C deposition; thermal isolation approach; void-free trench filling; Deep trench; Molecular effusion-Boltzmann model; Parylene C;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2010 5th IEEE International Conference on
Conference_Location :
Xiamen
Print_ISBN :
978-1-4244-6543-9
Type :
conf
DOI :
10.1109/NEMS.2010.5592481
Filename :
5592481
Link To Document :
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