DocumentCode
2432883
Title
Isothermal grain growth of CdTe in CdCl2 and Te fluxes [solar cells]
Author
Hiie, J. ; Altosaar, M. ; Mellikov, E. ; Madasson, J. ; Sapogova, J. ; Mikli, V.
Author_Institution
Dept. of Semicond. Mater. Technol., Tallinn Tech. Univ., Estonia
fYear
1997
fDate
29 Sep-3 Oct 1997
Firstpage
455
Lastpage
458
Abstract
The mechanism of isothermal recrystallization of CdTe powder in liquid CdCl2 and Te was studied and the possibility to grow CdTe monograin powders was shown. Te was found to act as an effective flux similarly to CdCl2 guaranteeing high growth rate for CdTe grains. At lower annealing temperatures (500-650°C) primary crystals grow mainly by deposition of material from saturated solution onto smooth crystal surfaces. In higher temperature region (700-800°C) there occurs remarkable sintering of particles and grains lose their round shape. Te in CdCl2 flux was found to reduce the formation of aggregates and to increase the rate of crystal growth
Keywords
II-VI semiconductors; annealing; cadmium compounds; grain growth; recrystallisation; semiconductor device testing; sintering; solar cells; 500 to 650 C; 700 to 800 C; CdCl2; CdTe; CdTe solar cells; Te; aggregates formation; annealing temperature; crystal growth rate; isothermal grain growth; isothermal recrystallization; monograin powder growth; sintering; Annealing; Crystalline materials; Crystallization; Crystals; Isothermal processes; Powders; Semiconductor materials; Shape; Tellurium; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location
Anaheim, CA
ISSN
0160-8371
Print_ISBN
0-7803-3767-0
Type
conf
DOI
10.1109/PVSC.1997.654126
Filename
654126
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