Title :
Evolution of N-V memories: Flash memory trends with PCRAM/FeRAM/ReRAM
Author_Institution :
IEEE SSCS
Abstract :
Anything that stores two states can be a memory. The challenge is to get: required properties and reliability for intended application at a competitive cost.
Keywords :
circuit reliability; flash memories; random-access storage; N-V memories; PCRAM/FeRAM/ReRAM; flash memory; reliability; Ferroelectric films; Flash memory; Nonvolatile memory; Phase change random access memory; Random access memory; Seminars;
Conference_Titel :
Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies, 2009. INTERNANO 2009. International School and Seminar on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-5534-8
DOI :
10.1109/INTERNANO.2009.5335614
