Ruthenium thin film growth under low temperature pulsed CVD conditions Using carbonyl-diene precursor

Author

Vasilyev, Vladislav Yu

Author_Institution

Novosibirsk State Tech. Univ., Novosibirsk, Russia

fYear

2009

fDate

28-31 Oct. 2009

Firstpage

78

Lastpage

80

Abstract

This paper is devoted to the investigation of the ruthenium films, chemically vapor deposited under low temperature and sequentially pulsed gas injection conditions. Experimental results presented and published in 2006-2008 have been briefly consolidated. This paper can be interesting to those working in modern precision technologies as well as postgraduate students.

Keywords

atomic layer deposition; chemical vapour deposition; metallic thin films; ruthenium; Ru; atomic layer deposition; carbonyl-diene precursor; chemical vapor deposition; film morphology; low temperature pulsed CVD; ruthenium thin film growth; sequentially pulsed gas injection conditions; Atherosclerosis; Chemical technology; Chemical vapor deposition; Conducting materials; Plasma temperature; Rough surfaces; Sputtering; Surface morphology; Surface roughness; Transistors; Ruthenium; carbonyl-diene precursor; pulsed chemical vapor deposition;

fLanguage

English

Publisher

ieee

Conference_Titel

Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies, 2009. INTERNANO 2009. International School and Seminar on

Conference_Location

Novosibirsk

Print_ISBN

978-1-4244-5534-8

Type

conf

DOI

10.1109/INTERNANO.2009.5335628

Filename

5335628