The influence of deformation on conductivity of Ga2O3-In2O3 thin films

Author

Kozlov, Alexander G. ; Kurdyukova, Ekaterina A.

Author_Institution

Rzhanov Inst. of Semicond. Phys., SB RAS, Omsk, Russia

fYear

2009

fDate

28-31 Oct. 2009

Firstpage

27

Lastpage

30

Abstract

Thin films of Ga₂O₃-In₂O₃ are obtained by magnetron deposition with further thermal oxidation. Dependences of resistance variation on time under strain and on strain value are observed. The model for explaining the obtained results is developed. It is based on the barrier conductivity of polycrystalline oxide semiconductor materials.

Keywords

deformation; electric resistance; electrical conductivity; gallium compounds; indium compounds; oxidation; piezoelectricity; semiconductor materials; semiconductor thin films; sputter deposition; stress effects; Ga₂O₃-In₂O₃; barrier conductivity; deformation; magnetron deposition; polycrystalline oxide semiconductor materials; resistance; strain effect; thermal oxidation; thin films; Capacitive sensors; Conductive films; Conductivity; Crystallization; Magnetic field induced strain; Semiconductor films; Semiconductor materials; Semiconductor thin films; Seminars; Substrates; Ga2O3-In2O3; conductivity; elastic stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies, 2009. INTERNANO 2009. International School and Seminar on

Conference_Location

Novosibirsk

Print_ISBN

978-1-4244-5534-8

Type

conf

DOI

10.1109/INTERNANO.2009.5335642

Filename

5335642