High luminescence efficient Ga polarity domain GaN realized on Si(111) by MOVPE

The stress and defect generation; hence luminescence efficiency of semiconductor materials is correlated. Even severe cracks are formed on the epilayer surface due to stress those impair the photoluminescence property of devices. So the stress effect of GaN epilayer grown on Si(111) is evaluated by different growth approaches and different interlayer´s. Epilayer on thinner converted SiC templates is found to increases PL Ex. peak energy with broadening its line width whereas epilayer grown on porously converted GaN layer is found comparatively low PL Ex. peak energy with narrowing its line width. From Raman scattering analysis, it is also observed that the PL Ex. peak is not signifies actual stress level rather its reveals epilayer quality. PL Ex. Peak energy is found to increase with increasing thickness of epilayer grown on converted interlayer on Si substrate.