DocumentCode
2433865
Title
Frequency opportunities of GaAs MDS-structures
Author
Beletsky, N.I. ; Polyansky, N.E. ; Prokhorov, E.D. ; Semenov, Alexander V.
Author_Institution
Kharkiv Nat. Univ., Ukraine
fYear
2000
fDate
11-15 Sept. 2000
Firstpage
428
Lastpage
429
Abstract
MDS-structures based on GaAs and carbon diamond-like films (CDLF) are experimentally investigated. Voltage-current and voltage-capacity characteristics are measured. The frequency band of such structures is calculated.
Keywords
III-V semiconductors; MIS structures; characteristics measurement; gallium arsenide; semiconductor device measurement; GaAs-C; III-V semiconductors; MDS-structures; frequency band; voltage-capacity characteristics; voltage-current characteristics; Conductivity; Diamond-like carbon; Frequency; Gallium arsenide; IEEE catalog; Indium tin oxide; Organizing; Resistance heating; Telecommunications; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2000. Microwave and Telecommunication Technology. 2000 10th International Crimean
Conference_Location
Crimea, Ukraine
Print_ISBN
966-572-048-1
Type
conf
DOI
10.1109/CRMICO.2000.1256168
Filename
1256168
Link To Document