RadHard 16Mbit Monolithic SRAM for Space Applications

Aeroflex Colorado Springs reported on a new error detection and correction (EDAC) based monolithic 16 Mbit static random access memory (SRAM) at the IEEE Aerospace Conference in 2006 by C. Hafer et al. (2006). This paper is an update on the 16 Mbit SRAM with new proton test data to supplement the heavy ion test data reported in 2006. A review of the 16 Mbit monolithic SRAM includes the SRAM architecture, a product/process description, radiation hardening techniques, electrical performance, total ionizing dose data, single event effects data, and single event upset error-rate calculations. The proton single event upset testing results will be shown at the conference. Since the heavy ion onset LET of the device is around 1 MeV-cm²/mg, the device is expected to be sensitive to protons by F.W. Sexton (1992). Proton data, therefore, is critical to a comprehensive understanding of the SEU performance of the device.