Title :
The influence of contact area widths on the RTD I-V characteristics
Author :
Abramov, I.I. ; Goncharenko, I.A.
Author_Institution :
Dept. of Informatics & Radioelectron., Belarussian State Univ., Minsk, Belarus
Abstract :
The influence of the widths of the RTD contact areas on its I-V characteristics has been investigated. This paper demonstrates the variations in the area widths significantly influence the RTD characteristics. Calculations have been performed using a combined model and its modifications based on the self-consistent solution to the Schrodinger and Poisson equations. This model has been integrated into the NS-RTS-NANODEV numerical simulation software suite.
Keywords :
Poisson equation; Schrodinger equation; numerical analysis; resonant tunnelling diodes; NS-RTS-NANODEV; Poisson equation; RTD; Schrodinger equation; numerical simulation software; resonant tunneling diode; self-consistent solution; Computational modeling; Helium; Hidden Markov models; IEEE catalog; Informatics; Microwave technology; Numerical simulation; Ohmic contacts; Organizing; Poisson equations;
Conference_Titel :
Microwave and Telecommunication Technology, 2003. CriMiCo 2003. 13th International Crimean Conference
Conference_Location :
Sevastopol, Crimea, Ukraine
Print_ISBN :
966-7968-26-X
DOI :
10.1109/CRMICO.2003.158925
