Title :
Evaluation of the predictive capability of Berkeley´s hot-carrier reliability model
Author :
Meehan, Alan ; Sullivan, Paula O. ; Hurley, Paul ; Mathewson, Alan
Author_Institution :
Nat. Microelectron. Res. Centre, Cork, Ireland
Abstract :
A model for hot-carrier reliability prediction developed at the University of California is widely used in industry. Confusion exists, however, as to how the model is to be applied. The model´s devisers suggest that hot-carrier degradation is most rapid when substrate current is maximum, yet the model itself is in strong disagreement with this. Since the minimum lifetime for a given drain voltage is of most interest, the minimum prediction of the model needs to be evaluated. The necessity of using a novel hot-carrier stress method in the evaluation is demonstrated
Keywords :
carrier lifetime; hot carriers; integrated circuit modelling; integrated circuit reliability; semiconductor device models; semiconductor device reliability; Berkeley model; drain voltage; hot-carrier degradation; hot-carrier reliability model; hot-carrier stress method; minimum lifetime; predictive capability; substrate current; Degradation; Equations; Hot carrier effects; Hot carriers; Life estimation; Performance evaluation; Predictive models; Stress; Testing; Voltage;
Conference_Titel :
Integrated Reliability Workshop, 1994. Final Report., 1994 International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-1908-7
DOI :
10.1109/IRWS.1994.515848