Title :
A technique for manufacturing dielectric membranes
Author :
Demchenko, A.I. ; Koryakin, S.V. ; Zavadskaya, N.I. ; Lobko, E.V.
Author_Institution :
Minsk Res. Inst. of Radio Mater., Belarus
Abstract :
A topical problem in manufacturing MEMS devices and various membrane-based sensors is the production of high-quality membranes. Dielectric and polysilicon films are used M. M Farooqui et al. (1991) for membranes. Dielectric membranes consisting of SiO/sub 2/, Si/sub 3/N/sub 4/ materials have also found wide application. The SiO/sub 2/, Si/sub 3/N/sub 4/ materials have high electrical resistivity and low thermal conduction, which makes them materials of choice for thermal membrane sensors where minimal losses of thermal energy are required.
Keywords :
dielectric materials; electrical resistivity; heat conduction; micromechanical devices; MEMS device; dielectric film; dielectric membrane manufacturing; high electrical resistivity; high-quality membranes; low thermal conduction; microelectromechanical system; polysilicon film; thermal membrane sensor; Biomembranes; Conducting materials; Dielectric films; Dielectric materials; Electric resistance; Manufacturing; Microelectromechanical devices; Production; Thermal conductivity; Thermal resistance;
Conference_Titel :
Microwave and Telecommunication Technology, 2003. CriMiCo 2003. 13th International Crimean Conference
Conference_Location :
Sevastopol, Crimea, Ukraine
Print_ISBN :
966-7968-26-X
DOI :
10.1109/CRMICO.2003.158947
