High Mobility n and p Channels on Gallium Arsenide and Silicon Substrates Using Interfacial Misfit Dislocation Arrays

We demonstrate the growth of III-Sb buffers on GaAs and Silicon substrates through the use of an epitaxial technique involving the formation of interfacial misfit dislocation arrays that is formed between the III-Sb alloy and the substrate. The interfacial misfit array results in the spontaneous relaxation of the highly mismatched III-Sb semiconductor and provides a platform for the realization of high mobility channels on GaAs and Silicon. We make use of InAs type -- II confinement structures for n-type and pseudomorphic InGaSb type -- I structures for p-type channels.