Title :
Effect of the irradiation temperature on the spectral response of Si solar cells
Author :
Bourgoin, Jacques C.
Author_Institution :
Groupe de Phys. des Solides, Paris VII Univ., France
fDate :
29 Sep-3 Oct 1997
Abstract :
The authors describe the variation of the spectral response of LILT, Si solar cells especially designed for deep space missions irradiated with 1016 cm-2, 1 MeV, electrons versus the temperature of irradiation in the range 80-300 K. Since the spectral response SR(λ) is temperature dependent, the degradation is given in terms of the quantity 1-SR(λ)/SR0(λ) where SR0 is the spectral response of the unirradiated cell. These data are correlated with the changes induced by the irradiation in the short circuit current. Information on the main recombination centers introduced by the irradiation at various temperatures can then be extracted
Keywords :
aerospace testing; elemental semiconductors; semiconductor device testing; silicon; solar cells; space vehicle power plants; 1 MeV; 80 to 300 K; Si; Si solar cells; deep space missions; irradiation temperature; recombination centers; short circuit current; space power; spectral response; Data mining; Degradation; Electrons; Lighting; Photovoltaic cells; Short circuit currents; Space missions; Spontaneous emission; Temperature dependence; Temperature distribution;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654243
