Title :
The influence of dense plasma of microwave discharge on the parameters of IC structures
Author_Institution :
Belarussian State Univ. of Informatics & Radioelectron., Minsk, Belarus
Abstract :
The existing techniques of vacuum plasma processing (cleaning, etching, deposition of materials) usually introduce significant additional structural imperfections into near-surface layers and films compromising their electrophysical properties and, consequently, parameters of devices manufactured on their basis.
Keywords :
high-frequency discharges; integrated circuit manufacture; microwave integrated circuits; plasma deposition; sputter etching; surface cleaning; vacuum microelectronics; vacuum techniques; IC structure; dense plasma; device manufacturing; electrophysical property; material cleaning; material deposition; material etching; microwave discharge; structural imperfection; surface film; surface layer; vacuum plasma processing; Cleaning; Etching; Microwave devices; Microwave integrated circuits; Plasma applications; Plasma density; Plasma devices; Plasma materials processing; Plasma properties; Vacuum technology;
Conference_Titel :
Microwave and Telecommunication Technology, 2003. CriMiCo 2003. 13th International Crimean Conference
Conference_Location :
Sevastopol, Crimea, Ukraine
Print_ISBN :
966-7968-26-X
DOI :
10.1109/CRMICO.2003.158998
