• DocumentCode
    244012
  • Title

    Methodical Design Approaches to Radiation Effects Analysis and Mitigation in Flip-Flop Circuits

  • Author

    Clark, Lawrence T. ; Shambhulingaiah, Sandeep

  • Author_Institution
    Sch. of Electr., Comput. & Energy Eng., Arizona State Univ., Tempe, AZ, USA
  • fYear
    2014
  • fDate
    9-11 July 2014
  • Firstpage
    595
  • Lastpage
    600
  • Abstract
    With transistor dimensions shrinking due to continued scaling, integrated circuits are increasingly susceptible to radiation upset. This paper presents a systematic methodology for evaluating circuit hardness, as well as graph clustering approaches to determine effective node separation to protect against upset due to multiple node charge collection. The methodology is circuit simulation based, making it efficient and usable by circuit designers. Example designs are presented to demonstrate the analysis and clustering for real flip-flop designs. Finally, the methodology is utilized to provide critical node separation for a new hardened flip-flop design that reduces the power and area by 27% and 19.5% respectively.
  • Keywords
    circuit simulation; flip-flops; integrated circuit design; radiation hardening (electronics); circuit hardness; circuit simulation; critical node separation; flip-flop circuit mitigation; flip-flop designs; graph clustering approaches; multiple node charge collection; radiation effects analysis; Clocks; Delays; Flip-flops; Latches; Law; Radiation hardening (electronics); Transient analysis; Flip-flop (FF); Multiple node charge collection (MNCC); Radiation hardening by design (RHBD); Single event transient (SET); Single event upset (SEU);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI (ISVLSI), 2014 IEEE Computer Society Annual Symposium on
  • Conference_Location
    Tampa, FL
  • Print_ISBN
    978-1-4799-3763-9
  • Type

    conf

  • DOI
    10.1109/ISVLSI.2014.74
  • Filename
    6903429