DocumentCode
244012
Title
Methodical Design Approaches to Radiation Effects Analysis and Mitigation in Flip-Flop Circuits
Author
Clark, Lawrence T. ; Shambhulingaiah, Sandeep
Author_Institution
Sch. of Electr., Comput. & Energy Eng., Arizona State Univ., Tempe, AZ, USA
fYear
2014
fDate
9-11 July 2014
Firstpage
595
Lastpage
600
Abstract
With transistor dimensions shrinking due to continued scaling, integrated circuits are increasingly susceptible to radiation upset. This paper presents a systematic methodology for evaluating circuit hardness, as well as graph clustering approaches to determine effective node separation to protect against upset due to multiple node charge collection. The methodology is circuit simulation based, making it efficient and usable by circuit designers. Example designs are presented to demonstrate the analysis and clustering for real flip-flop designs. Finally, the methodology is utilized to provide critical node separation for a new hardened flip-flop design that reduces the power and area by 27% and 19.5% respectively.
Keywords
circuit simulation; flip-flops; integrated circuit design; radiation hardening (electronics); circuit hardness; circuit simulation; critical node separation; flip-flop circuit mitigation; flip-flop designs; graph clustering approaches; multiple node charge collection; radiation effects analysis; Clocks; Delays; Flip-flops; Latches; Law; Radiation hardening (electronics); Transient analysis; Flip-flop (FF); Multiple node charge collection (MNCC); Radiation hardening by design (RHBD); Single event transient (SET); Single event upset (SEU);
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI (ISVLSI), 2014 IEEE Computer Society Annual Symposium on
Conference_Location
Tampa, FL
Print_ISBN
978-1-4799-3763-9
Type
conf
DOI
10.1109/ISVLSI.2014.74
Filename
6903429
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