DocumentCode
2440501
Title
Strained In0.53Ga0.47As/InxGa1-xAs (x>0.6) multiquantum well thermophotovoltaic converters
Author
Serdiukova, I. ; Newman, F. ; Aguillar, L. ; Vilela, M.F. ; Monier, C. ; Freundlich, A.
Author_Institution
Space Vacuum Epitaxy Center, Houston Univ., TX, USA
fYear
1997
fDate
29 Sep-3 Oct 1997
Firstpage
963
Lastpage
966
Abstract
In this work a new thermophotovoltaic converter is investigated. Strained narrow band gap InxGa1-xAs/In0.47 Ga0.53As (x>0.6) multiple quantum wells (MQW) are introduced within the intrinsic region of a conventional In0.47 Ga0.53As p-i-n cell lattice matched to InP. An appropriate choice of well/barrier thickness and number of wells in the i-region maintains the pseudomorphism and lattice matching to InP, while, the presence of narrow band gap wells extends photon absorption up to that of confined energy states in wells. For low temperature black body emitters (1200-1500 K), this new device conversion efficiency is predicted to exceed twice that of its conventional counterpart
Keywords
III-V semiconductors; energy gap; gallium arsenide; indium compounds; photovoltaic cells; semiconductor device models; semiconductor quantum wells; 1200 to 1500 K; InxGa1-xAs/In0.47Ga0.53 As (x>0.6) multiple quantum well thermophotovoltaic cells; InGaAs-InGaAs; barrier thickness; conversion efficiency; intrinsic region; lattice matching; low temperature black body emitters; narrow band gap wells; photon absorption; pseudomorphism; strained narrow band gap devices; thermophotovoltaic converters; well thickness; Absorption; Capacitive sensors; Charge carrier processes; Indium gallium arsenide; Indium phosphide; Lattices; Narrowband; PIN photodiodes; Photonic band gap; Quantum well devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location
Anaheim, CA
ISSN
0160-8371
Print_ISBN
0-7803-3767-0
Type
conf
DOI
10.1109/PVSC.1997.654248
Filename
654248
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