Title :
Strained In0.53Ga0.47As/InxGa1-xAs (x>0.6) multiquantum well thermophotovoltaic converters
Author :
Serdiukova, I. ; Newman, F. ; Aguillar, L. ; Vilela, M.F. ; Monier, C. ; Freundlich, A.
Author_Institution :
Space Vacuum Epitaxy Center, Houston Univ., TX, USA
fDate :
29 Sep-3 Oct 1997
Abstract :
In this work a new thermophotovoltaic converter is investigated. Strained narrow band gap InxGa1-xAs/In0.47 Ga0.53As (x>0.6) multiple quantum wells (MQW) are introduced within the intrinsic region of a conventional In0.47 Ga0.53As p-i-n cell lattice matched to InP. An appropriate choice of well/barrier thickness and number of wells in the i-region maintains the pseudomorphism and lattice matching to InP, while, the presence of narrow band gap wells extends photon absorption up to that of confined energy states in wells. For low temperature black body emitters (1200-1500 K), this new device conversion efficiency is predicted to exceed twice that of its conventional counterpart
Keywords :
III-V semiconductors; energy gap; gallium arsenide; indium compounds; photovoltaic cells; semiconductor device models; semiconductor quantum wells; 1200 to 1500 K; InxGa1-xAs/In0.47Ga0.53 As (x>0.6) multiple quantum well thermophotovoltaic cells; InGaAs-InGaAs; barrier thickness; conversion efficiency; intrinsic region; lattice matching; low temperature black body emitters; narrow band gap wells; photon absorption; pseudomorphism; strained narrow band gap devices; thermophotovoltaic converters; well thickness; Absorption; Capacitive sensors; Charge carrier processes; Indium gallium arsenide; Indium phosphide; Lattices; Narrowband; PIN photodiodes; Photonic band gap; Quantum well devices;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654248
