• DocumentCode
    2441202
  • Title

    Plasma charging damage of ultra-thin gate-oxide-the measurement dilemma

  • Author

    Cheung, Kin P. ; Mason, Philip ; Hwang, David

  • Author_Institution
    Lucent Technol. Bell Labs., USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    10
  • Lastpage
    13
  • Abstract
    We examined the problem of detecting plasma charging damage in deep submicron technology where the gate-oxide is ultra-thin. From the viewpoint of damage impacting gate-oxide reliability, we show that the current available method is incapable to provide sufficient sensitivity
  • Keywords
    plasma materials processing; deep submicron technology; plasma charging damage measurement; reliability; ultrathin gate oxide; Antenna measurements; Area measurement; Circuit synthesis; Current measurement; Electric breakdown; Gate leakage; Leakage current; Plasma measurements; Stress measurement; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Plasma Process-Induced Damage, 2000 5th International Symposium on
  • Conference_Location
    Santa Clara, CA
  • Print_ISBN
    0-9651577-4-1
  • Type

    conf

  • DOI
    10.1109/PPID.2000.870566
  • Filename
    870566
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2441202