Title :
Damage-free plasma treatment before SACVD deposition
Author :
Bloot, Annemarie S. ; Peters, Walter ; Luchies, Jan-Marc
Author_Institution :
Philips Semicond., Nijmegen, Netherlands
Abstract :
Charging impact of various plasma treatments before intermetal dielectric SACVD deposition has been investigated. Dry strip using CF 4/O2 or CF4/H2O plasma as well as SACVD pre-treatments with O2, N2 are compared with no plasma treatment. Furthermore, O2, pre-treatment is investigated for a lamp-heated and a D×Z SACVD deposition tool. The evaluation methods in-line Plasma Damage Monitor (PDM) wafers, end-of-line electrically tested antenna structures, Qbd measurements and product yield data show consistent results. The studied dry strip recipes using CF4/O2 or CF4/H2O plasma introduce some charging. A N2 plasma pre-treatment results in high PDM values (40 V), no failing antenna structures, no Qbd fails and some yield loss (0.9%). This work showed for O2 pre-treatment on a lamp-heated deposition tool excessive PDM values (-31 V), failing antenna structures (6.9%), Qbd fails (4.2%) and yield loss (1.8%). However, the use of a O2 plasma in a D×Z tool is found to be the best pre-treatment
Keywords :
chemical vapour deposition; ion-surface impact; sputter etching; surface cleaning; surface treatment; N2; O2; SACVD deposition; damage-free plasma treatment; end-of-line electrically tested antenna structures; evaluation methods; intermetal dielectric SACVD deposition; product yield data; Design for quality; Dielectrics; Electric variables measurement; Plasma applications; Plasma chemistry; Plasma measurements; Semiconductor films; Strips; Surface morphology; Very large scale integration;
Conference_Titel :
Plasma Process-Induced Damage, 2000 5th International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-9651577-4-1
DOI :
10.1109/PPID.2000.870588
