Towards an understanding of electrically active carbon interstitial defects in Si/sub 1-y/C/sub y/ buried channel n-MOSFETs

Author

Weber, O. ; Ducroquet, F. ; Militaru, L. ; Ernst, Thomas ; Hartmann, J.-M. ; Bouche, J.-B. ; Laffond, D. ; Brévard, L. ; Holliger, P. ; Deleonibus, S.

Author_Institution

CEA/DRT/LETI, Grenoble, France

fYear

2003

fDate

16-18 Sept. 2003

Firstpage

271

Lastpage

274

Abstract

A comprehensive interface defect identification in Si/sub 1-y/C/sub y/ buried channel n-MOSFETs is presented. Interface state density (D/sub it/) and trapped oxide charges (Q/sub ox/) are characterized by capacitive and charge pumping measurements. We show the predominant role of the interstitial carbon related defects C/sub s/-C/sub i//sup +/ and C/sub i//sup -/ on the interface degradation. Moreover, the boron impact on these carbon interface defects is investigated. Carbon incorporation into the oxide during surface oxidation is also discussed.

Keywords

MOSFET; boron; carbon; interface states; oxidation; silicon compounds; wide band gap semiconductors; B; C; SiC; boron diffusion; buried channel n-MOSFET; capacitive measurements; carbon interstitial defects; charge pumping measurements; electrically active carbon; interface defect boron impact; interface defect identification; interface degradation; interface state density; oxide carbon incorporation; surface oxidation; trapped oxide charges; Boron; Charge measurement; Charge pumps; Current measurement; Degradation; Density measurement; Interface states; MOSFET circuits; Oxidation; Q measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on

Conference_Location

Estoril, Portugal

Print_ISBN

0-7803-7999-3

Type

conf

DOI

10.1109/ESSDERC.2003.1256866

Filename

1256866