Title :
Towards an understanding of electrically active carbon interstitial defects in Si/sub 1-y/C/sub y/ buried channel n-MOSFETs
Author :
Weber, O. ; Ducroquet, F. ; Militaru, L. ; Ernst, Thomas ; Hartmann, J.-M. ; Bouche, J.-B. ; Laffond, D. ; Brévard, L. ; Holliger, P. ; Deleonibus, S.
Author_Institution :
CEA/DRT/LETI, Grenoble, France
Abstract :
A comprehensive interface defect identification in Si/sub 1-y/C/sub y/ buried channel n-MOSFETs is presented. Interface state density (D/sub it/) and trapped oxide charges (Q/sub ox/) are characterized by capacitive and charge pumping measurements. We show the predominant role of the interstitial carbon related defects C/sub s/-C/sub i//sup +/ and C/sub i//sup -/ on the interface degradation. Moreover, the boron impact on these carbon interface defects is investigated. Carbon incorporation into the oxide during surface oxidation is also discussed.
Keywords :
MOSFET; boron; carbon; interface states; oxidation; silicon compounds; wide band gap semiconductors; B; C; SiC; boron diffusion; buried channel n-MOSFET; capacitive measurements; carbon interstitial defects; charge pumping measurements; electrically active carbon; interface defect boron impact; interface defect identification; interface degradation; interface state density; oxide carbon incorporation; surface oxidation; trapped oxide charges; Boron; Charge measurement; Charge pumps; Current measurement; Degradation; Density measurement; Interface states; MOSFET circuits; Oxidation; Q measurement;
Conference_Titel :
European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on
Conference_Location :
Estoril, Portugal
Print_ISBN :
0-7803-7999-3
DOI :
10.1109/ESSDERC.2003.1256866
