DocumentCode :
2442360
Title :
A process and deep level evaluation tool: afterpulsing in avalanche junctions
Author :
Giudice, A.C. ; Ghioni, M. ; Cova, S. ; Zappa, F.
Author_Institution :
Politecnico di Milano, Italy
fYear :
2003
fDate :
16-18 Sept. 2003
Firstpage :
347
Lastpage :
350
Abstract :
A technique for a separate experimental characterization of generation centres and deep levels in junctions is presented. The test device required is a small junction that operates in Geiger-mode above the breakdown level. Time-resolved measurements of correlated afterpulsing effects are exploited for separating noise contributions due to generation centres and to carrier trapping in deep levels. Release transients down to the nanosecond range are characterised and lifetimes of individual trap levels are measured. Experimental data for devices fabricated with different technologies illustrate the information gained about the efficiency of the fabrication process and in particular of gettering steps.
Keywords :
avalanche diodes; deep levels; electron traps; hole traps; semiconductor device measurement; semiconductor device noise; SPAD; above breakdown level Geiger-mode; avalanche diode junction; avalanche junction afterpulsing; correlated afterpulsing effects; deep level carrier trapping; deep level evaluation tool; generation centre noise contributions; gettering steps; process evaluation tool; release transients; single-photon avalanche diodes; trap level lifetime; Avalanche breakdown; Detectors; Diodes; Electric breakdown; Fabrication; Noise generators; Noise level; Optical pulses; Testing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on
Conference_Location :
Estoril, Portugal
Print_ISBN :
0-7803-7999-3
Type :
conf
DOI :
10.1109/ESSDERC.2003.1256885
Filename :
1256885
Link To Document :
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