• DocumentCode
    2442571
  • Title

    Modelling and simulating the selective epitaxial growth of silicon under consideration of anisotropic growth rates

  • Author

    Spallek, Rainer G. ; Temmler, Dietmar ; Preusser, T. ; Ronsch, T. ; Ulbrich, Stefan

  • Author_Institution
    Dept. of Comput. Eng., Dresden Univ. of Technol., Germany
  • fYear
    2003
  • fDate
    16-18 Sept. 2003
  • Firstpage
    387
  • Lastpage
    390
  • Abstract
    This work presents a new model for the simulation of thin layer deposition and etching processes. Especially suited for the simulation of highly anisotropic processes, the frontier model is introduced in the context of selective epitaxial growth of silicon. The general approach to this new simulation model is described, and the simulation of selective epitaxial growth is validated against experimental results.
  • Keywords
    elemental semiconductors; epitaxial growth; semiconductor process modelling; silicon; Si; anisotropic growth rates; anisotropic processes; frontier model; silicon selective epitaxial growth; thin layer deposition; thin layer etching; Anisotropic magnetoresistance; Atmospheric modeling; Computational modeling; Context modeling; Epitaxial growth; Etching; Random access memory; Semiconductor process modeling; Silicon; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on
  • Conference_Location
    Estoril, Portugal
  • Print_ISBN
    0-7803-7999-3
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2003.1256895
  • Filename
    1256895
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2442571