Title :
Borderless nitride requirements for embedded non-volatile deep sub-micron technologies
Author :
Cacciato, A. ; Scarpa, A. ; Diekema, M. ; de Ven, G.V. ; van Marwijk, L. ; Dormans, Do
Author_Institution :
Philips Semicond., Nijmegen, Netherlands
Abstract :
In this paper, we evaluate the extra requirements that borderless materials, widely used in standard logic technologies as stop layers during oxide etch, have to fulfil for high-voltage non-volatile applications. We also evaluate the effect of nitride conduction on charging damage during contact etch. In particular, it is demonstrated that nitride layers can act as antennas, thus causing charging damage.
Keywords :
CMOS memory circuits; etching; random-access storage; silicon compounds; CMOS logic technologies; SiN; SiON; borderless materials; borderless nitride requirements; contact etch charging damage; high-voltage nonvolatile memory; nitride conduction; nitride layer antennas; oxide etch stop layers; Conducting materials; Contacts; Etching; Nonvolatile memory; Plasma applications; Plasma materials processing; Plasma temperature; Plasma transport processes; Silicon compounds; Voltage;
Conference_Titel :
European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on
Conference_Location :
Estoril, Portugal
Print_ISBN :
0-7803-7999-3
DOI :
10.1109/ESSDERC.2003.1256919
