Title :
Analysis of improved DC and AC performances of an InGaP/GaAs heterojunction bipolar transistor with a graded Al/sub x/Ga/sub 1-x/As layer at emitter/base heterojunction
Author :
Cheng, Shiou-Ying
Author_Institution :
Dept. of Electr. Eng., Oriental Inst. of Technol., Taipei, Taiwan
Abstract :
An InGaP/GaAs heterojunction bipolar transistor (HBT) with a continuous conduction-band structure is demonstrate and theoretically investigated. This device exhibited good performance, including lower turn-on voltage, lower offset voltage, and smaller collector current saturation voltage. The novel aspect of device structure design is the adoption of the compositionally linear-graded AlGaAs layer between the InGaP-emitter and GaAs-base layers. Therefore, the studied device shows better DC and AC performances than a conventional device. Consequently, this provides a substantial benefit for practical analog and digital applications, especially, for lower operation voltage, lower power consumption, commercial and military products.
Keywords :
III-V semiconductors; aluminium compounds; conduction bands; gallium compounds; heterojunction bipolar transistors; indium compounds; low-power electronics; GaAs-base; HBT; InGaP-AlGaAs-GaAs; InGaP-emitter; collector current saturation voltage; compositionally linear-graded AlGaAs layer; continuous conduction-band structure; emitter/base heterojunction; heterojunction bipolar transistor; low offset voltage; low turn-on voltage; Ambient intelligence; Artificial intelligence; Computer aided analysis; Energy consumption; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Materials reliability; Performance analysis; Voltage;
Conference_Titel :
European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on
Conference_Location :
Estoril, Portugal
Print_ISBN :
0-7803-7999-3
DOI :
10.1109/ESSDERC.2003.1256921