Title :
Theoretical modeling of PtSi/porous Schottky detectors
Author :
Raissi, Farshid ; Far, Mansoor Mohtashami
Author_Institution :
Electr. Eng. Dept., K. N. Toosi Univ. of Technol., Tehran, Iran
Abstract :
The current-voltage characteristic of PtSi/porous Si Schottky detectors has been modeled. It is assumed that high electric fields are developed at sharp and irregular edges of the porous surface, causing avalanche and tunneling breakdown. The shape of the I-V curve, its change with temperature, its response to near and far IR, and the large quantum efficiency are satisfactorily explained by this model.
Keywords :
Schottky barriers; avalanche breakdown; elemental semiconductors; high field effects; infrared detectors; platinum compounds; porous semiconductors; semiconductor device breakdown; semiconductor device models; semiconductor-metal boundaries; silicon; tunnelling; I-V characteristic; I-V curve shape; IR detection; IR response; PtSi-Si; PtSi/porous Si Schottky detectors; avalanche breakdown; current-voltage characteristic; high electric fields; quantum efficieny; theoretical modeling; tunneling breakdown; Avalanche breakdown; Etching; Fabrication; Infrared detectors; Reproducibility of results; Schottky barriers; Shape; Sputtering; Temperature; Tunneling;
Conference_Titel :
Microelectronics, 2001. ICM 2001 Proceedings. The 13th International Conference on
Print_ISBN :
0-7803-7522-X
DOI :
10.1109/ICM.2001.997483
