A Radiation Data Set for the NGC W28C0108 SONOS 128kx8 EEPROM

Author

Adams, Dennis A. ; Fitzpatrick, Michael D. ; Folk, Erica C. ; Goldstein, Norman P. ; Hand, William L. ; Horner, Jeremiah J. ; Shea, Patrick B. ; Lewis, Randall D. ; Smith, Joseph T. ; Peyton, Phillip L. ; Sheehy, James J. ; Dame, Jeffrey A. ; Grant, Gary

Author_Institution

Grumman Corp., Baltimore, MD, USA

fYear

2009

fDate

20-24 July 2009

Firstpage

136

Lastpage

139

Abstract

A 1 Mb (128kx8) EEPROM using SONOS (silicon-oxide-nitride-oxide-silicon) technology has been designed and fabricated for radiation hardened space applications. To ensure reliable operation of flight units, the NGC W28C0108 128kx8 EEPROM has been exposed to an extensive set of environmental radiation testing. In addition, a detailed reliability study has been performed to determine memory retention activation energy, which is used to calculate a worst case retention lifetime for the part. The details of the radiation and reliability tests conducted, as well as the test results and conclusions, are presented in this paper.

Keywords

EPROM; radiation hardening (electronics); random-access storage; semiconductor device reliability; semiconductor device testing; semiconductor storage; space vehicle electronics; NGC W28C0108 SONOS 128kx8 EEPROM; environmental radiation testing; memory retention activation energy; nonvolatile memory transistors; radiation data set; radiation hardened space applications; reliability test; retention lifetime; silicon-oxide-nitride-oxide-silicon technology; storage capacity 1 Mbit; Annealing; EPROM; Electron traps; Laboratories; Life testing; Nonvolatile memory; Performance evaluation; SONOS devices; Silicon; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation Effects Data Workshop, 2009 IEEE

Conference_Location

Quebec City, QC

Print_ISBN

978-1-4244-5092-3

Type

conf

DOI

10.1109/REDW.2009.5336301

Filename

5336301