DocumentCode
2444895
Title
Sensitivity to LET and Test Conditions for SEE Testing of Power MOSFETs
Author
Scheick, Leif ; Selva, Luis
Author_Institution
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fYear
2009
fDate
20-24 July 2009
Firstpage
82
Lastpage
93
Abstract
The results of recent single event gate rupture and single event burnout testing on power MOSFETS are presented. The recent test data show a considerable drop in failure voltage in comparison to manufacturer data for device ratings over 130 V. The effect of range is considered to account for this difference. The methods and practices for testing and data analyses that need to be used for adequate SEE testing of power MOSFETs are also presented.
Keywords
fracture; power MOSFET; radiation hardening (electronics); semiconductor device testing; space vehicle electronics; LET sensitivity; SEE testing; data analysis; failure voltage; power MOSFET; single event burnout testing; single event gate rupture testing; space missions; Circuit testing; Current measurement; Electric variables measurement; Epitaxial layers; Laboratories; Leakage current; MOSFETs; Manufacturing; Space technology; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop, 2009 IEEE
Conference_Location
Quebec City, QC
Print_ISBN
978-1-4244-5092-3
Type
conf
DOI
10.1109/REDW.2009.5336308
Filename
5336308
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