• DocumentCode
    2445015
  • Title

    SEGR/SEB Test Results on Emerging Hi-Rel Power MOSFETs

  • Author

    Selva, Luis E. ; Ikeda, Naomi ; Scheick, Leif Z.

  • Author_Institution
    Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
  • fYear
    2009
  • fDate
    20-24 July 2009
  • Firstpage
    76
  • Lastpage
    81
  • Abstract
    Test results for several newly available Hi-Rel total dose hardened power MOSFETs are presented. The safe-operating-area (SOA) of several devices were determined with Ag and Xe ions having incident LETs of 42.2 and 53.1 MeV cm2/mg, respectively. Test results show these devices are comparable to currently available total dose hardened technology.
  • Keywords
    aerospace instrumentation; ion beam effects; power MOSFET; radiation hardening (electronics); semiconductor device testing; Hi-Rel total dose hardened power MOSFETs; SEGR-SEB test; aerospace applications; device safe-operating-area; incident LETs; linear energy transfer; silver ion; total dose hardened technology; xenon ion; Aerospace testing; Electric variables measurement; MOSFETs; Manufacturing; NASA; Performance evaluation; Radiation hardening; Space technology; Telephony; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop, 2009 IEEE
  • Conference_Location
    Quebec City, QC
  • Print_ISBN
    978-1-4244-5092-3
  • Type

    conf

  • DOI
    10.1109/REDW.2009.5336311
  • Filename
    5336311
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2445015