Title :
Low Dose Rate Test Results of National Semiconductor´s ELDRS-Free Bipolar Low Dropout (LDO) Regulator, LM2941 at Dose Rates of 1 and 10 Mrad(Si)/S
Author :
Kruckmeyer, Kirby ; McGee, Larry ; Trinh, Thang ; Benedetto, Joe
Author_Institution :
Nat. Semicond., Santa Clara, CA, USA
Abstract :
Low dose rate (LDR), ultralow dose rate (UDR) and high dose rate (HDR) total ionizing dose (TED) test results, drift analysis and an enhanced low dose rate sensitivity (ELDRS) characterization are presented for National Semiconductor´s EDLRS-free bipolar low dropout (LDO) regulator, LM2941WGRLQMLV (5962R9166702VYA). Dose rates used were 0.001, 0.01 and 170 rad(Si)/s.
Keywords :
aerospace instrumentation; radiation hardening (electronics); voltage regulators; 5962R9166702VYA; LM2941; LM2941WGRLQMLV; National Semiconductor ELDRS-free bipolar LDO regulator; drift analysis; enhanced low dose rate sensitivity; high dose rate; low dose rate test; low dropout regulator; space applications; total ionizing dose; ultralow dose rate; Automotive applications; Degradation; History; Ionizing radiation; Power supplies; Regulators; Semiconductor device testing; Springs; Telephony; Voltage;
Conference_Titel :
Radiation Effects Data Workshop, 2009 IEEE
Conference_Location :
Quebec City, QC
Print_ISBN :
978-1-4244-5092-3
DOI :
10.1109/REDW.2009.5336312
