DocumentCode
2447258
Title
Circuit techniques for gate and sub-threshold leakage minimization in future CMOS technologies
Author
Rao, Rahul M. ; Burns, Jeffrey L. ; Brown, Richard B.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fYear
2003
fDate
16-18 Sept. 2003
Firstpage
313
Lastpage
316
Abstract
Leakage current is becoming an increasingly important fraction of the total power dissipation of integrated circuits. This work focuses on leakage power minimization in light of the growing significance of gate leakage current. The need to consider gate leakage while determining the sleep-state pattern is demonstrated. Circuit reorganization and sleep-state assignment techniques are presented for gate and total leakage minimization of static and dynamic circuits. We also re-evaluate the MTCMOS circuit scheme for total leakage minimization.
Keywords
CMOS integrated circuits; integrated circuit technology; leakage currents; minimisation; CMOS technologies; MTCMOS circuit scheme; circuit reorganization; circuit techniques; dynamic circuits; gate leakage current; gate leakage minimization; integrated circuits; leakage power minimization; sleep-state assignment techniques; sleep-state pattern; static circuits; sub-threshold leakage minimization; total leakage minimization; total power dissipation; CMOS technology; Circuits; Gate leakage; Leakage current; MOS devices; Minimization; Power dissipation; Subthreshold current; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2003. ESSCIRC '03. Proceedings of the 29th European
Conference_Location
Estoril, Portugal
Print_ISBN
0-7803-7995-0
Type
conf
DOI
10.1109/ESSCIRC.2003.1257135
Filename
1257135
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