• DocumentCode
    2447258
  • Title

    Circuit techniques for gate and sub-threshold leakage minimization in future CMOS technologies

  • Author

    Rao, Rahul M. ; Burns, Jeffrey L. ; Brown, Richard B.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
  • fYear
    2003
  • fDate
    16-18 Sept. 2003
  • Firstpage
    313
  • Lastpage
    316
  • Abstract
    Leakage current is becoming an increasingly important fraction of the total power dissipation of integrated circuits. This work focuses on leakage power minimization in light of the growing significance of gate leakage current. The need to consider gate leakage while determining the sleep-state pattern is demonstrated. Circuit reorganization and sleep-state assignment techniques are presented for gate and total leakage minimization of static and dynamic circuits. We also re-evaluate the MTCMOS circuit scheme for total leakage minimization.
  • Keywords
    CMOS integrated circuits; integrated circuit technology; leakage currents; minimisation; CMOS technologies; MTCMOS circuit scheme; circuit reorganization; circuit techniques; dynamic circuits; gate leakage current; gate leakage minimization; integrated circuits; leakage power minimization; sleep-state assignment techniques; sleep-state pattern; static circuits; sub-threshold leakage minimization; total leakage minimization; total power dissipation; CMOS technology; Circuits; Gate leakage; Leakage current; MOS devices; Minimization; Power dissipation; Subthreshold current; Tunneling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2003. ESSCIRC '03. Proceedings of the 29th European
  • Conference_Location
    Estoril, Portugal
  • Print_ISBN
    0-7803-7995-0
  • Type

    conf

  • DOI
    10.1109/ESSCIRC.2003.1257135
  • Filename
    1257135