Title :
A fully integrated 5.3 GHz, 2.4V, 0.3 W SiGe-bipolar power amplifier with 50/spl Omega/ output
Author :
Bakalski, W. ; Simbürger, W. ; Thüringer, R. ; Vasylyev, A. ; Scholtz, A.L.
Author_Institution :
Inst. of Commun. & Radio-Frequency Eng., Vienna Univ. of Technol., Austria
Abstract :
A radio frequency power amplifier for 4.8-5.7 GHz has been realized in a 0.25 /spl mu/m SiGe-bipolar technology. The balanced 2-stage push pull power amplifier uses two on chip transformers as input-balun and for interstage matching. Further it uses three coils for the integrated LC-output balun and the rf-choke. Thus the power amplifier is free of any external components. At 1.0V, 1.5V, 2.4V supply voltages output powers of 17.7 dBm, 21.6 dBm, 25dBm are achieved at 5.3 GHz. The respective power added efficiency is 15.6%, 22.4%, 24%. The small-signal gain is 26dB.
Keywords :
Ge-Si alloys; UHF integrated circuits; baluns; bipolar analogue integrated circuits; differential amplifiers; impedance matching; integrated circuit design; low-power electronics; power amplifiers; radiofrequency amplifiers; 0.25 micron; 0.3 W; 1.0 V; 1.5 V; 2.4 V; 4.8 to 5.7 GHz; 5.3 GHz; LC-output balun; SiGe; SiGe bipolar power amplifier; SiGe bipolar technology; input-balun; interstage matching; push pull power amplifier; radio frequency power amplifier; rf choke; two on chip transformers; Capacitors; Circuit synthesis; Driver circuits; Impedance matching; Integrated circuit technology; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Resonance; Transformers;
Conference_Titel :
Solid-State Circuits Conference, 2003. ESSCIRC '03. Proceedings of the 29th European
Conference_Location :
Estoril, Portugal
Print_ISBN :
0-7803-7995-0
DOI :
10.1109/ESSCIRC.2003.1257197
